InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished Applicators Thickness: 2

Thickness: 2

Middle Layers (Both Sides) Thermal Softening Index

This product is not manufactured by MTI

Wafer Size:    0

pressing die set for making 14-15 mm diameter sample pellets

InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished Applicators Thickness: 25x5x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K