50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacers"> 50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacers"> 50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacers – wnoz-abocard.de

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Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacers

$125.35

Quantity
50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacers">
Description

Top and bottom insulating spacers are made of nylon

Please click the picture below right to order extra consumables

D quartz tube with a built-in 2-inch adapter on each end

Recommend to use a torque wrench when tightening the top plunger for good electrical contact and repeatability ( click Pic 1 to order )

Note:  EPI ready wafers

Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Top and bottom insulating spacersGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

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