Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) Control Panel

Control Panel

and 1800  with adhesive backing are included for immediate use (please click the picture below left to order extra)

uniform color

This cell is especially suitable for post-analysis of target electrode to determine the limiting factors of battery efficiency and stability

Laser Mark: none

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm Bi12GeO20 (BGO20) Control PanelSingle crystal Si Conductivity: N type ( P doped) Resistivity: 0. 1 1 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter x 0. 525 mm Orientation: (100) + 0. 5 Deg Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Diamond Scriber for Cutting Single Crystal Substrate DS 01