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VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Net Weight 20g/bottle (around 300
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Net Weight 20g/bottle (around 300
$161.68
Description
Net Weight 20g/bottle (around 300 pcs/ bottle)
Auxiliary positioning for the position of the separator
Melting Point ~700-750 °C
Polish: Both sides polished
Polished: One side polished
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Net Weight 20g/bottle (around 300Ge Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 50(+ _0. 3) mm dia x 175(+ _15) microns Surface Polishing: Both sides polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 008 0. 021Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: N A Mobility: N A EPD:
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
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- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm GaN Net Weight 20g/bottle (around 300){kind=link}
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