GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z 94mm Flatness = 0

94mm Flatness   = 0

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GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z 94mm Flatness = 0GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 625 mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (0. 74 3. 60) x 10^19 cm^3 Mobility: 59 88 cm^2 V. S EPD: < 5000 cm^2 resistivity: (2. 92 9. 70)x10^ 3 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces