N type, Sb doped, 2){kind=link}
Artwork closet_27346
US$ 75.00
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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm Applicators Dimensions Case: 46mm(OD) x 45
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm Applicators Dimensions Case: 46mm(OD) x 45
$181.67
Description
Dimensions Case: 46mm(OD) x 45
EPD: N/A
Mobility: 140 cm^2/Vs
)): 109 - 1011
Orientation: (110) +/_0
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm Applicators Dimensions Case: 46mm(OD) x 45Ge Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A Density:
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