Al2O3 - Sapphire Wafer, M plane, 5x5x0.5mm,1 SP - ALM050505S1 Orientation A-plane(11-20) Continuous working temperature: 1200 °C

Continuous working temperature: 1200 °C

One O-ring with 195mm(ID) x 3

Thickness: 5mm

Length:                           100 mm

Wafer Container

Al2O3 - Sapphire Wafer, M plane, 5x5x0.5mm,1 SP - ALM050505S1 Orientation A-plane(11-20) Continuous working temperature: 1200 °CFearures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 5 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. M plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with