Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness Ingestion-build-279162 Why should you use this

Why should you use this standard

The responsibility to identify the extent of the tests to be carried out lies with the manufacturer/supplier on the basis of his assessment of the market requirements

Normative and informative references have been updated

Acknowledgement is given to the following organizations that were involved in the development of this PAS as members of the steering group:

By using BS EN 4836

Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness Ingestion-build-279162 Why should you use thisWhat is this standard about? This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with