Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001 CeO2 (Epi-film) Carrier Concerntration: (1

Carrier Concerntration:        (1

Surface roughness:           < 5 A ( by AFM)

Outside: 160mmL x 160mmW x 160mmH (6

Heating Rate

Part Number EQ-EC-422

Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"dia x 0.5mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm-cm - Fm300SOonSISba101D0525C1R001 CeO2 (Epi-film) Carrier Concerntration: (1Thermal oxide Layer Research Grade, about 80% useful area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Sb dped Resistivity: Resistivities: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mmth Orientation: (100) + 0. 5o