InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Transmittance of ITO glass: >

Transmittance of ITO glass: > 83%

45") 1 Resin50 Resin Bonded Ceramics for Sample Holding 2 LSS009 Aluminum Plate  2 LSS010 Wexford for samples bounding 1 set LSS012 One Fuse 1  LSS013 AC Power Cord 1 LSS014 Screw Driver 1 set LSS015 Two Motor belts per set for of Driving Motor 1 set LSS016 A bag of 150-Lube Cutting Lubricant

Surface load: 13

PTC Thermistor will break the current when heated to 120ºC

To use outside the glove box

InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Transmittance of ITO glass: >Growth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side