, 5 x 5 x 0.5 mm, 1sp Conductive Ceramic Substrates current: 73 A){kind=link}
KIZ25003-1C Stage 2 - Cushioned Ceramic
US$ 475.98
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp Conductive Ceramic Substrates current: 73 A
$86.25
Description
current: 73 A
pic1 pic2
D x 22mm I
02 mA to 10 mA
Net weight:13
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp Conductive Ceramic Substrates current: 73 A(GaP single crystal wafer Size: 5mmx5mmx0. 5mm Doping: S doped, Conducting type: N type Orientation: (100)+_30' Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration
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