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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3 Tube Blocks low compression set
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3 Tube Blocks low compression set
$206.32
Description
low compression set
One Co-axial Nozzle
How To Bend Stainless Steel Pipe
Size: 2" dia
no registry modifications required
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3 Tube Blocks low compression setGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: One side polished Doping: Si doped Conductor type: N type Carrier Concentration: (0. 63 1. 33) x 10^18 cm^3 Mobility: (2170 2920) cm^2 V. S Resistivity: (2. 12 3. 55) E 3 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness): < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
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