1000 ohm-cm Max. current +2 A 1 g/cm3Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1000 ohm cm Size: 1" diameter x 0. 5 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater"> 1000 ohm-cm Max. current +2 A 1 g/cm3"> 1000 ohm-cm Max. current +2 A 1 g/cm3Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1000 ohm cm Size: 1" diameter x 0. 5 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater"> 1000 ohm-cm Max. current +2 A 1 g/cm3"> 1000 ohm-cm Max. current +2 A 1 g/cm3Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1000 ohm cm Size: 1" diameter x 0. 5 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater"> Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm Max. current +2 A 1 g/cm3 – wnoz-abocard.de

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Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm Max. current +2 A 1 g/cm3

$33.75

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1000 ohm-cm Max. current +2 A 1 g/cm3">
Description

1        g/cm3

For light evacuation application

Avoid contacts with moisture

Al2O3  Purity: 96% size: 6

OD:    27 mm

Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm Max. current +2 A 1 g/cm3Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1000 ohm cm Size: 1" diameter x 0. 5 mm Orientation: (111) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater

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