M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode StdTpc-Photolithography Metrology SEMI 3D20-0921 (technical revision)

SEMI 3D20-0921 (technical revision)

20 for devices of 100 volt human body model [HBM] sensitivity) so the guidance given here should be applied only within a specially designated and clearly identified area

SEMI PV87-1018 (first published)

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SEMI MF1153 — Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode StdTpc-Photolithography Metrology SEMI 3D20-0921 (technical revision)1 Purpose 1. 1 The net carrier density and the resistivity of silicon epitaxial layers are critical parameters in semiconductor device design. Controlling these values during the semiconductor device manufacturing process is essential in determining the devices performance through the margin of the semiconductor device design. 1. 2 This Test Method can be used for research and development, process control, as well as material specification,