M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals Revision:SEMI M14-89 - Inactive Silicon (Si) wafers for PV

Silicon (Si) wafers for PV applications cut from a Si ingot or Si brick contain a variety of micro- and macroscopic crystallographic defects and flaws that may impact the efficiency of a solar cells or the yield of a manufacturing line

This Standard specifies the tool side of the interface between a process or metrology tool and a front-opening box

NOTICE: This Standard is no longer published with the SEMI E54 suite of Standards

This Standard applies to "Specifications for Dimension of Components for Surface Mount Gas Distribution Systems" (SEMI F82

NOTICE: This Standard was completely rewritten in 2024

M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals Revision:SEMI M14-89 - Inactive Silicon (Si) wafers for PVThe purpose of this document is to present a process for ion implantation, activation, and measurement of the resulting layers so that meaningful comparisons can be made between various lots of semi insulating GaAs. This test will be performed by the supplier so that product may be represented in a standard way. Referenced SEMI Standards None.