M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers StdPbc-0317 Knowledge of near-edge geometrical properties

Knowledge of near-edge geometrical properties can help the producer and consumer determine if the dimensional characteristics of a specimen wafer satisfy given geometrical requirements

The notations of crystallographic orientation are unified to prevent possible misunderstandings

and wafer packaging materials

SEMI 3D10-0814 (Reapproved 1025)

Such ingots are sliced into wafers that are subsequently used for the production of semiconductor devices

M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers StdPbc-0317 Knowledge of near-edge geometrical propertiesNOTICE: This Standard was balloted and approved for withdrawal in 2021. Compound semiconductor epitaxial layers have been extensively used for many years as the basis of high speed electronics and optoelectronic devices. There are suppliers of epitaxial layers who will grow material to the customers specification. There is a need to define standardized descriptive terms, tolerance schedules and recommended test methods to reduce ambiguity in the